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MAGX-002731-180L00 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MAGX-002731-180L00 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 6 page GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty MAGX-002731-180L00 Production V2 26 Oct 12 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Features GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200°C) EAR99 Export Classification Application Civilian and Military Pulsed Radar Product Description The MAGX-002731-180L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-180L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information MAGX-002731-180L00 180W GaN Power Transistor MAGX-002731-SB3PPR Evaluation Fixture Typical Peak RF Performance Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows: Vdd=50V, Idq=500mA (pulsed gate bias), F=2.7- 3.1 GHz, Pulse Width=300ms, Duty=10%. 50V, 300us, 10% Freq Pin Pout Gain Flat Eff Droop (MHz) (Wpk) (Wpk) (dB) (dB) (%) (dB) 2700 14 193.6 11.4 - - 48.9 0.45 2800 14 208.0 11.7 - - 48.6 0.43 2900 14 199.3 11.5 - - 45.8 0.44 3000 14 199.3 11.5 - - 47.7 0.45 3100 14 185.8 11.2 0.52 47.5 0.41 50V, 500us, 10% Freq Pin Pout Gain Flat Eff Droop (MHz) (Wpk) (Wpk) (dB) (dB) (%) (dB) 2700 14 198.2 11.5 - - 50.4 0.58 2800 14 213.1 11.8 - - 49.9 0.55 2900 14 203.2 11.6 - - 46.8 0.58 3000 14 201.2 11.6 - - 48.8 0.53 3100 14 183.2 11.2 0.65 48.3 0.53 |
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