GaN HEMT Pulsed Power Transistor

2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty

MAGX-002731-180L00

Production V2

26 Oct 12

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

1

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

Features

 GaN depletion mode HEMT microwave transistor

 Common source configuration

 Broadband Class AB operation

 Thermally enhanced Cu/Mo/Cu package

 RoHS Compliant

 +50V Typical Operation





EAR99 Export Classification

Application

 Civilian and Military Pulsed Radar

Product Description

The MAGX-002731-180L00 is a gold metalized

matched Gallium Nitride (GaN) on Silicon

Carbide RF power transistor optimized for civilian

and military radar pulsed applications between

2700 - 3100 MHz. Using state of the art wafer

fabrication processes, these high performance

transistors provide high gain, efficiency,

bandwidth, ruggedness over a wide bandwidth

for today’s demanding application needs. The

MAGX-002731-180L00 is constructed using a

thermally enhanced Cu/Mo/Cu flanged ceramic

package which provides excellent thermal

performance. High breakdown voltages allow for

reliable and stable operation in extreme

mismatched load conditions unparalleled with

older semiconductor technologies.

Ordering Information

MAGX-002731-180L00

180W GaN Power Transistor

MAGX-002731-SB3PPR

Evaluation Fixture

Typical Peak RF Performance

Typical RF performance measured in M/A-COM RF test fixture.

Devices tested in common source Class-AB configuration as

follows: Vdd=50V, Idq=500mA (pulsed gate bias), F=2.7- 3.1

GHz, Pulse Width=300ms, Duty=10%.

50V, 300us, 10%

Freq

Pin

Pout Gain Flat

Eff

Droop

(MHz) (Wpk) (Wpk) (dB) (dB)

(%)

(dB)

2700

14

193.6 11.4

- -

48.9

0.45

2800

14

208.0 11.7

- -

48.6

0.43

2900

14

199.3 11.5

- -

45.8

0.44

3000

14

199.3 11.5

- -

47.7

0.45

3100

14

185.8 11.2 0.52 47.5

0.41

50V, 500us, 10%

Freq

Pin

Pout Gain Flat

Eff

Droop

(MHz) (Wpk) (Wpk) (dB) (dB)

(%)

(dB)

2700

14

198.2 11.5

- -

50.4

0.58

2800

14

213.1 11.8

- -

49.9

0.55

2900

14

203.2 11.6

- -

46.8

0.58

3000

14

201.2 11.6

- -

48.8

0.53

3100

14

183.2 11.2 0.65 48.3

0.53