2N4119A datasheet(3/6 Pages) VISHAY

Part #	2N4119A

Description	N-Channel JFETs

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Manufacturer	VISHAY [Vishay Siliconix]

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2N/PN/SST4117A Series

Vishay Siliconix

Document Number: 70239

S-41231—Rev. G, 28-Jun-04

www.vishay.com

3

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Gate Leakage Current

Drain Current and Transconductance

vs. Gate-Source Cutoff Voltage

Common-Source Forward Transconductance

vs. Drain Current

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

Output Characteristics

1000

0

−5

−4

−3

−2

−1

800

0

06

30

gfs

IDSS

TA = 25_C

100 mA

IGSS @ 25_C

100 mA

Output Characteristics

500

400

300

100

0

−0.5 V

−1.0 V

−2.0 V

−1.5 V

VGS = 0 V

15

0

−3

−5

−4

−2

−1

12

9

6

3

0

0.01

0.1

1

200

160

120

40

0

5

4

3

2

1

0

rDS @ ID = 10 mA, VGS = 0 V

gos @ VDS = 10 V, VGS = 0 V

f = 1 kHz

rDS

gos

TA = −55_C

125_C

VDS = 10 V

f = 1 kHz

100

016

8

420

80

60

20

0

VGS = 0 V

−0.5 V

−0.4 V

−0.3 V

−0.2 V

−0.1 V

VGS(off) − Gate-Source Cutoff Voltage (V)

VDS − Drain-Source Voltage (V)

VDG − Drain-Gate Voltage (V)

ID − Drain Current (mA)

VGS(off) − Gate-Source Cutoff Voltage (V)

VDS − Drain-Source Voltage (V)

600

400

200

12

18

24

80

25_C

VGS(off) = −0.7 V

VGS(off) = −2.5 V

200

40

12

0

16

8

420

12

IDSS @ VDS = 10 V, VGS = 0 V

gfs @ VDS = 10 V, VGS = 0 V

f = 1 kHz

300

240

180

120

60

0

10 mA

0.1 pA

1 pA

10 pA

100 pA

1 nA

IGSS @ 125_C

VGS(off) = −2.5 V

10 mA

VGS(off) = −2.5 V

TA = 125_C

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