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MJ1001 Datasheet(PDF) 2 Page - Savantic, Inc. |
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MJ1001 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors MJ1000/1001 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT MJ1000 60 V(BR)CEO Collector-emitter breakdown voltage MJ1001 IC=0.1A ;IB=0 80 V VCE(sat)-1 Collector-emitter saturation voltage IC=3A; IB=12mA 2.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=8A; IB=40mA 4.0 V VBE Base-emitter on voltage IC=3A ; VCE=3V 2.5 V MJ1000 VCE=60V; RBE=1.0k@ TC=150 1.0 5.0 ICER Collector cut-off current MJ1001 VCE=80V; RBE=1.0k@ TC=150 1.0 5.0 mA MJ1000 VCE=30V; IB=0 ICEO Collector cut-off current MJ1001 VCE=40V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 2.0 mA hFE-1 DC current gain IC=3A ; VCE=3V 1000 hFE-2 DC current gain IC=4A ; VCE=3V 750 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.94 /W |
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