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AP2501M8-13 Datasheet(PDF) 4 Page - Diodes Incorporated |
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AP2501M8-13 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 18 page AP2501/AP2511 Document number: DS35577 Rev. 6 - 2 4 of 18 www.diodes.com March 2013 © Diodes Incorporated AP2501/AP2511 Electrical Characteristics (@ TA = +25°C, VIN = +5.0V, CIN = 0.1µF, CL = 1µF,unless otherwise specified.) Symbol Parameter Conditions (Note 7) Min Typ Max Unit VUVLO Input UVLO VIN rising 1.6 2.0 2.4 V ΔVUVLO Input UVLO Hysteresis VIN decreasing 50 mV ISHDN Input Shutdown Current Disabled, OUT = open 0.1 1.0 µA IQ Input Quiescent Current Enabled, OUT = open 60 100 µA ILEAK Input Leakage Current Disabled, OUT grounded 0.1 1.0 µA IREV Reverse Leakage Current Disabled, VIN = 0V, VOUT = 5V, IREV at VIN 0.01 1.00 µA RDS(ON) Switch on-resistance VIN = 5V, IOUT = 1A TA = 25 oC 70 78 mΩ -40°C ≤ TA ≤ 85°C 105 VIN = 3.3V, IOUT = 1A TA = 25 oC 90 108 -40°C ≤ TA ≤ 85°C 135 ILIMIT Over-Load Current Limit (Note 7) VIN = 5V, VOUT = 4.5V -40°C≤ TA ≤85°C 2.8 3.7 4.6 A ITRIG Current limiting trigger threshold Output Current Slew rate (<100A/s) 3.7 A ISHORT Short-Circuit Current Limit Enabled into short circuit 3.7 A TSHORT Short-Circuit Response Time VOUT = 0V to IOUT = ILIMIT (OUT shorted to ground) 2 µs VIL EN Input Logic Low Voltage VIN = 2.7V to 5.5V 0.8 V VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V 2 V ILEAK-EN EN Input leakage VIN = 5V, VEN = 0V and 5.5V 0.01 1.00 µA ILEAK-O Output leakage current Disabled, VOUT = 0V 0.5 1 µA TD(ON) Output turn-on delay time CL = 1µF, RLOAD = 5Ω 0.1 ms TR Output turn-on rise time CL = 1µF, RLOAD = 5Ω 0.6 1.5 ms TD(OFF) Output turn-off delay time CL = 1µF, RLOAD = 5Ω 0.1 ms TF Output turn-off fall time CL = 1µF, RLOAD = 5Ω 0.05 0.10 ms RFLG FLG output FET on-resistance IFLG = 10mA 20 40 Ω IFOH FLG Off Current VFLG = 5V 0.01 1.00 µA TBLANK FLG Blanking Time Assertion or deassertion due to overcurrent and over-temperature condition 4 7 15 ms TDIS Discharge time CL= 1µF, VIN = 5V, disabled to VOUT < 0.5V 0.6 ms RDIS Discharge resistance (Note 8) VIN = 5V, disabled, IOUT = 1mA 100 Ω TSHDN Thermal Shutdown Threshold Enabled 140 C THYS Thermal Shutdown Hysteresis 20 C θJA Thermal Resistance Junction-to- Ambient SO-8 (Note 9) 96 C/W MSOP-8 (Note 9) 130 C/W MSOP-8EP (Note 10) 92 C/W U-DFN3030-8 (Note 10) 84 C/W U-DFN2020-6 (Note 11) 90 C/W Notes: 7. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. 8. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when VIN < VUVLO). The discharge function offers a resistive discharge path for the external storage capacitor for limited time. 9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 10. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane. 11. Device mounted on 1"x1" FR-4 substrate PCB, 2oz copper, with minimum recommended padon top layer and thermal vias to bottom layer ground |
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