IRF9520NS/L

PD -91522A

5/13/98

S

D

G

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

3.1

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

40

Thermal Resistance

°C/W

Parameter

Max.

Units

-6.8

-4.8

A

Pulsed Drain Current

…

-27

Power Dissipation

3.8

W

Power Dissipation

48

W

Linear Derating Factor

0.32

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚…

140

mJ

Avalanche Current



-4.0

A

Repetitive Avalanche Energy



4.8

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ…

-5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for

use in a wide variety of applications.

accommodatingdiesizesuptoHEX-4.Itprovidesthehighest

power capability and the lowest possible on-resistance in

for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a

typical surface mount application.

The through-hole version (IRF9520L) is available for low-

profile applications.

Description

2

D

Pak

TO -26 2