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STF10NM60ND Datasheet(PDF) 5 Page - STMicroelectronics |
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STF10NM60ND Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 19 page STD10NM60ND, STF10NM60ND, STP10NM60ND Electrical characteristics Doc ID 18467 Rev 2 5/19 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 8 32 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 8 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, di/dt = 100 A/µs VDD= 60 V (see Figure 20) - 118 680 11 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 20) - 150 918 12 ns nC A |
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