NPN SILICON PLANAR EPITAXIAL TRANSISTORS

2N3700

2N3701

TO-18

General purpose amplifier

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

140

V

Collector -Emitter Voltage

VCEO

80

V

Emitter -Base Voltage

VEBO

7.0

V

Collector Current

IC

1.0

A

Power Dissipation @Ta=25 deg C

PD

500

mW

Derate Above 25 deg C

2.85

mW/deg C

@TC=25 deg C

PD

1.8

W

Derate Above 25 deg C

10.6

mW/deg C

Operating And Storage Junction

Tj, Tstg

-65 to +200

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

70

deg C/W

Junction to Ambient

Rth(j-a)

245

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector-Cut off Current

ICBO

VCB=90V, IE=0

-

10

nA

VCB=90V, IE=0

-

10

uA

Emitter-Cut off Current

IEBO

VEB=5V, IC=0

-

10

nA

Collector -Base Voltage

VCBO

IC=100uA, IE=-0

140

-

V

Collector -Emitter Voltage

VCEO*

IC=30mA, IB=0

80

-

V

Emitter -Base Voltage

VEBO

IE=100uA, IC=-0

7.0

-

V

Collector Emitter (Sat) Voltage

VCE(Sat)*

IC=150mA,IB=15mA

-

0.2

V

IC=500mA,IB=50mA

-

0.5

V

Base Emitter (Sat) Voltage

VBE(Sat) *

IC=150mA,IB=15mA

-

1.1

V

2N3700

2N3701

DC Current Gain

hFE*

IC=0.1mA,VCE=10V

>50

30-100

IC=10mA,VCE=10V

>90

40-12O

IC=150mA,VCE=10V

100-300

40-12O

IC=500mA,VCE=10V

>50

30-100

IC=1A,VCE=10V

>15

>15

Tc= -55 deg C

IC=150mA,VCE=10V

>40

-

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company