January 2014

FQD2N90 / FQU2N90

900 V, 1.7 A, 7.2 Ω

Description

©2009 Fairchild Semiconductor Corporation

FQD2N90 / FQU2N90 Rev. C2

www.fairchildsemi.com

1

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and

electronic lamp ballasts.

Features

G

D

S

I-PAK

D-PAK

G

S

D

G

S

D

Thermal Characteristics

Symbol

Parameter

FQD2N90TM

FQU2N90TU_WS

FQU2N90TU_AM002

Unit

Thermal Resistance, Junction to Case, Max.

2.5

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.

110

50

• Low Gate Charge (Typ. 12 nC)

• Low Crss (Typ. 5.5 pF)

• 100% Avalanche Tested

• RoHS Compliant

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Symbol

Parameter

FQD2N90TM

FQU2N90TU_WS

FQU2N90TU_AM002

Unit