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L6387 Datasheet(PDF) 5 Page - STMicroelectronics

Part # L6387
Description  HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6387 Datasheet(HTML) 5 Page - STMicroelectronics

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drop on the bootstrap DMOS:
Vdrop
= IchargeRdson → Vdrop =
Qgate
Tcharge
Rdson
where Qgate is the gate charge of the external
power MOS, Rdson is the on resistance of the
bootstrap DMOS, and Tcharge is the charging time
of the bootstrap capacitor.
For example: using a power MOS with a total
gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the Tcharge is 5
µs. In fact:
Vdrop
=
30nC
5
µs
⋅ 125Ω ~ 0.8V
Vdrop has to be taken into account when the volt-
age drop on CBOOT is calculated: if this drop is
too high, or the circuit topology doesn’t allow a
sufficient charging time, an external diode can be
used.
TO LOAD
D99IN1056
H.V.
HVG
ab
LVG
HVG
LVG
CBOOT
TO LOAD
H.V.
CBOOT
DBOOT
VBOOT
VS
VS
VOUT
VBOOT
VOUT
Figure 3. Bootstrap Driver.
-45
-25
0
25
50
75
100
125
0
50
100
150
200
250
Tj (°C)
Typ.
@ Vcc = 15V
Figure 4. Turn On Time vs. Temperature
-45
-25
0
25
50
75
100
125
0
50
100
150
200
250
Tj (°C)
Typ.
@ Vcc = 15V
Figure 5. Turn Off Time vs. Temperature
L6387
5/9


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