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BCW33 Datasheet(PDF) 1 Page - Continental Device India Limited |
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BCW33 Datasheet(HTML) 1 Page - Continental Device India Limited |
1 / 3 page Continental Device India Limited Data Sheet Page 1 of 3 BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 BCW33 D.C. current gain at Tj = 25 °C > 110 200 420 IC = 2 mA; VCE = 5 V hFE < 220 450 800 Collector–base voltage (open emitter) VCB0 max. 32 V Collector–emitter voltage (open base) VCE0 max. 32 V Collector current (peak value) ICM max. 200 mA Total power dissipation up to Tamb = 25 °C Ptot max. 250 mW Junction temperature Tj max. 150 ° C Transition frequency at f = 35 MHz IC = 2 mA; VCE = 5 V fT typ. 300 MHz Noise figure at RS = 2 kW IC = 200 mA; VCE = 5 V; f = 1 kHz; B = 200 Hz F < 10 dB Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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