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AL8806Q Datasheet(PDF) 3 Page - Diodes Incorporated |
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AL8806Q Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 13 page AL8806Q Document number: DS36905 Rev. 1 - 2 3 of 13 www.diodes.com April 2014 © Diodes Incorporated AL8806Q Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter Min Max Unit VIN Operating Input Voltage relative to GND 6.0 30 V VCTRLH Voltage High for PWM Dimming Relative to GND 2.6 5.5 V VCTRLDC Voltage range for 20% to 100% DC Dimming Relative to GND 0.5 2.5 V VCTRLL Voltage Low for PWM Dimming Relative to GND 0 0.4 V fSW Maximum Switching Frequency — 1 MHz ISW Continuous Switch Current — 1.5 A TJ Junction Temperature Range -40 +125 °C Electrical Characteristics (@ VIN = 12V, TA = +25°C, unless otherwise specified.) Symbol Parameter Conditions Min Typ. Max Unit VINSU Internal regulator start up threshold VIN rising — — 5.9 V VINSH Internal regulator hysteresis threshold VIN falling 100 — 300 mV IQ Quiescent current Output not switching (Note 5) — — 350 µA IS Input supply Current CTRL pin floating f = 250kHz — 1.8 5 mA VTH Set current Threshold Voltage VCTRL ≥ 2.6V or floating. 95 100 105 mV VTH-H Set threshold hysteresis — — ±20 — mV ISET SET pin input current VSET = VIN-0.1 — 16 22 µA RCTRL CTRL pin input resistance Referred to internal reference — 50 — kΩ VREF Internal Reference Voltage — — 2.5 — V RDS(on) On Resistance of SW MOSFET ISW = 1A — 0.18 0.35 Ω ISW_Leakage Switch leakage current VIN = 30V — — 0.5 μA θJA Thermal Resistance Junction-to- Ambient (Note 6) (Note 7) — 69 — °C/W θJC Thermal Resistance Junction-to-Case (Note 6) (Note 7) — 4.3 — Notes: 5. AL8806Q does not have a low power standby mode but current consumption is reduced when output switch is inhibited: VSENSE = 0V. Parameter is tested with VCTRL ≤ 2.5V 6. Refer to figure 5 for the device derating curve. 7. Measured on an FR4 51x51mm PCB with 2oz copper standing in still air with minimum recommended pad layout on top layer and thermal vias to bottom layer maximum area ground plane. For better thermal performance, larger copper pad for heat-sink is needed. 8. Dominant conduction path via exposed pad. Refer to figure 5 for the device derating curve. |
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