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BU506DF Datasheet(PDF) 2 Page - Savantic, Inc. |
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BU506DF Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU506DF CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0,L=25mH 700 V VCEsat Collector-emitter saturation voltage IC=3A; IB=1.33A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=1.33A 1.3 V hFE-1 DC current gain IC=0.1A ; VCE=5V 6 13 30 hFE-2 DC current gain IC=3A ; VCE=5V 2.25 ICES Collector cut-off current VCE=rated; VBE=0 Tj=125 0.5 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 200 mA VF Diode forward voltage IF=3A; 1.5 2.2 V Switching times ts Storage time 6.5 µs tf Fall time ICM = 3 A; IB(end) = 1A LB = 12µH 0.7 µs |
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