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THS7364 Datasheet(PDF) 2 Page - Texas Instruments |
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THS7364 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 49 page THS7364 SBOS530 – AUGUST 2010 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION(1)(2) PRODUCT PACKAGE-LEAD TRANSPORT MEDIA, QUANTITY ECO STATUS(2) THS7364IPW Rails, 70 TSSOP-20 Pb-Free, Green THS7364IPWR Tape and Reel, 2000 (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the device product folder at ti.com. (2) These packages conform to Lead (Pb)-free and green manufacturing specifications. Additional details including specific material content can be accessed at www.ti.com/leadfree. GREEN: TI defines Green to mean Lead (Pb)-Free and in addition, uses less package materials that do not contain halogens, including bromine (Br), or antimony (Sb) above 0.1% of total product weight. N/A: Not yet available Lead (Pb)-Free; for estimated conversion dates, go to www.ti.com/leadfree. Pb-FREE: TI defines Lead (Pb)-Free to mean RoHS compatible, including a lead concentration that does not exceed 0.1% of total product weight, and, if designed to be soldered, suitable for use in specified lead-free soldering processes. ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range, unless otherwise noted. THS7364 UNIT MIN MAX Supply voltage, VS+ to GND 5.5 V Input voltage, VI –0.4 VS+ V Output current, IO ±90 mA Maximum junction temperature, any condition(2), TJ +150 °C Maximum junction temperature, continuous operation, long-term reliability(3), TJ +125 °C Storage temperature range, TSTG –60 +150 °C Human body model (HBM) 4000 V ESD rating: Charge device model (CDM) 1000 V Machine model (MM) 200 V (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process. (3) The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device. THERMAL INFORMATION THS7364 THERMAL METRIC(1) PW UNITS 20 PINS qJA Junction-to-ambient thermal resistance 108.0 qJC(top) Junction-to-case(top) thermal resistance 41.6 qJB Junction-to-board thermal resistance 61.3 °C/W yJT Junction-to-top characterization parameter 2.9 yJB Junction-to-board characterization parameter 58.4 qJC(bottom) Junction-to-case(bottom) thermal resistance n/a (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 2 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): THS7364 |
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