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AS081Q15000W Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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AS081Q15000W Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
1 / 2 page 20.09.2010 AS081Q15000W 1 of 2 AS081Q15000W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features Applications • Output Power: 15000 W qCW • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency • QCW stack can be designed according to the customer of non-standard products heat sink package • Laser Pumping • Medical Usage • High power laser diode applications Specifications (25°C) Item Symbol Value Unit Optical Specifications qCW Output Power PO 15000 W qCW Output Power / Bar PS 100 W Array Length L 10 mm Center Wavelength λC 780-830 nm Wavelength Tolerance ± 5 nm Spectral Width Δλ ≤ 4 nm Package Style Micro Channel Bar Length 0.5 mm Number of Bars 150 Wavelength Temperature Coefficient 0.3 nm/°C Beam Divergence θ┴×θ║ 40x8 deg Electrical Specifications Slope Efficiency ES ≥ 1 W/A Conversion Efficiency NS ≥ 40% Threshold Current ITH ≤ 25 A Operating Current IF ≤ 120 A Operating Voltage UF ≤ 300 V Absolute Maximum Ratings Reverse Voltage UR 2.5 V Operating Temperature TOP +10 … +40 °C Storage Temperature TSTG -40 ... +85 °C |
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