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AS081Q15000W Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH

Part # AS081Q15000W
Description  High Power Stacked Infrared Laser Diode Array
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Manufacturer  ROITHNER [Roithner LaserTechnik GmbH]
Direct Link  http://www.roithner-laser.com
Logo ROITHNER - Roithner LaserTechnik GmbH

AS081Q15000W Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH

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20.09.2010
AS081Q15000W
1 of 2
AS081Q15000W
TECHNICAL DATA
High Power Stacked Infrared Laser Diode Array
Features
Applications
• Output Power: 15000 W qCW
• 780-830 nm Emission Wavelength
• Spectral Width: ≤4 nm
• High Reliability, High Efficiency
• QCW stack can be designed according to the
customer of non-standard products heat sink
package
• Laser Pumping
• Medical Usage
• High power laser diode applications
Specifications (25°C)
Item
Symbol
Value
Unit
Optical Specifications
qCW Output Power
PO
15000
W
qCW Output Power / Bar
PS
100
W
Array Length
L
10
mm
Center Wavelength
λC
780-830
nm
Wavelength Tolerance
± 5
nm
Spectral Width
Δλ
≤ 4
nm
Package Style
Micro Channel
Bar Length
0.5
mm
Number of Bars
150
Wavelength Temperature Coefficient
0.3
nm/°C
Beam Divergence
θ×θ
40x8
deg
Electrical Specifications
Slope Efficiency
ES
≥ 1
W/A
Conversion Efficiency
NS
≥ 40%
Threshold Current
ITH
≤ 25
A
Operating Current
IF
≤ 120
A
Operating Voltage
UF
≤ 300
V
Absolute Maximum Ratings
Reverse Voltage
UR
2.5
V
Operating Temperature
TOP
+10 … +40
°C
Storage Temperature
TSTG
-40 ... +85
°C


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