STF13NM60N-H datasheet(1/13 Pages) STMICROELECTRONICS

Part #	STF13NM60N-H

Description	N-channel 600 V, 0.28 廓, 11 A MDmesh??II Power MOSFET in TO-220FP

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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January 2010

Doc ID 16963 Rev 1

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13

STF13NM60N-H

N-channel 600 V, 0.28

Ω, 11 A MDmesh™ II Power MOSFET

in TO-220FP

Features

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

■ Switching applications

Description

This series of devices implements second

generation MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Figure 1.

Internal schematic diagram

Type

VDSS

(@Tjmax)

RDS(on)

max

ID

STF13NM60N-H

650 V

< 0.36

Ω

11 A

TO-220FP

1

2

3

Table 1.

Device summary

Order codes

Marking

Packages

Packaging

STF13NM60N-H(1)

13NM60N

TO-220FP

Tube

1.

The device meets ECOPACK® standards, an environmentally-friendly grade of products commonly referred to as

“halogen-free” . See

Section 4: Package mechanical data.

www.st.com

Obsolete

Product(s)

- Obsolete

Product(s)

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STMicroelectronics	STF13NM60N	989Kb / 21P	N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages
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STF13NM60N-H Datasheet(PDF) 1 Page - STMicroelectronics

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