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ZVN1409A Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZVN1409A Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 3 page  N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 90 Volt V DS * Low input capacitance * Fast switching ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 90 V Continuous Drain Current ID 10 mA Pulsed Drain Current IDM 40 mA Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 90 V ID=0.1mA, VGS=0V Gate-Source Breakdown Voltage VGS(th) 0.8 2.4 V ID=0.1mA, VDS= VGS Gate Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 1 100 (2) µA µA VDS=90V, VGS=0V VDS=72V, VGS=0V, T=125°C On State Drain Current (1) ID(on) 10 mA VDS=25 V, VGS=10V Static Drain Source On State Resistance (1) RDS(on) 250 Ω VGS=10V,ID=5mA Forward Transconductance (1)( 2) gfs 2mS VDS=25V,ID=10mA Input Capacitance (2) Ciss 6.5 pF Common Source Output Capacitance (2) Coss 3pF VDS=25 V, VGS=0V f=1MHz Reverse Transfer Capacitance (2) Crss 0.65 pF Turn-On Delay Time (2)(3)(4) td(on) 0.3 ns VDD ≈25V, ID=5mA Rise Time (2)(3)(4) tr 0.5 ns Turn-Off Delay Time (2)(3)(4) td(off) 0.35 ns Fall Time (2)(3)(4) tf 0.5 ns ( 1 E-Line TO92 Compatible ZVN1409A 3-358 D G S TYPICAL CHARACTERISTICS Output Characteristics VDS - Drain Source Voltage (Volts) Transfer Characteristics 0 2 4 6810 0 10 20 30 40 50 Saturation Characteristics 6 0 2 4 8 2 4 6810 10 Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts) 5V ID= 24mA 18mA 12mA VGS-Gate Source Voltage (Volts) 0 40 10 20 50 30 VGS= 10V 8V VDS - Drain Source Voltage (Volts) 6V 4V 3V 02 4 6 8 10 40 10 20 50 30 VDS= 10V Normalised RDS(on) and VGS(th) vs Temperature -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 Drai n-S ou rc e R es istan ce R DS( on ) Gate Threshold Vo ltage VGS (th) Tj-Junction Temperature (C°) 0.4 -80 -60 5V VGS= 10V 8V 6V 4V 3V On-resistance v drain current ID-Drain Current (mA) 1 10 100 5V VGS=4V 10V 100 1000 500 6V 8V ID=5mA VGS=10V ID=1mA VGS=VDS 60 70 40 10 20 50 30 ZVN1409A 3-359 |
Similar Part No. - ZVN1409A |
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Similar Description - ZVN1409A |
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