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2N2484UBC Datasheet(PDF) 2 Page - Microsemi Corporation |
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2N2484UBC Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 2 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 T4-LDS-0058 Rev. 1 (080853) Page 2 of 2 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 6.0Vdc IEBO 2.0 10 ηAdc μAdc ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 1.0μAdc, VCE = 5.0Vdc IC = 10μAdc, VCE = 5.0Vdc IC = 100μAdc, VCE = 5.0Vdc IC = 500μAdc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc hFE 45 200 225 250 250 225 500 675 800 800 800 Collector-Emitter Saturation Voltage IC = 1.0mAdc, IB = 100μAdc VCE(sat) 0.3 Vdc Base-Emitter Voltage VCE = 5.0Vdc, IC = 100μAdc VBE(ON) 0.5 0.7 Vdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Forward Current Transfer Ratio IC = 50μAdc, VCE = 5.0Vdc, f = 5.0MHz IC = 500μAdc, VCE = 5.0Vdc, f = 30MHz |hfe| 3.0 2.0 0.7 Open Circuit Output Admittance IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hoe 40 μmhos Open Circuit Reverse-Voltage Transfer Ratio IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hre 8.0 x 10 -4 Input Impedance IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hje 3.5 24 k Ω Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hfe 250 900 Output Capacitance VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 5.0 pF Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 6.0 pF (2) Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0%. |
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