Pulse Amp Module

RRP291K0-10

Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com

All specifications may change without notice

US Facility : 919-677-8780 / sales@rfhicusa.com

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Version 1.0

Product Features

Applications

• Frequency from 2.7 ~ 3.1GHz

• GaN HEMT

• 50 Ohm Input/Output impedance

• High efficiency

• Radar system

Description

The RRP291K0-10 is designed for Radar system application frequencies from 2.7 ~ 3.1GHz.

This module uses GaN HEMT technology which performs high breakdown voltage, wide bandwidth and high efficiency.

PARAMETER

UNIT

MIN

TYP

MAX

SYMBOL

Operating Frequency

MHz

2700

-

3100

Operating Bandwidth

MHz

-

400

-

BW

Output Pulse Power

W

1000

1100

-

Input Pulse Power

dBm

-

0

-

Power Gain

dB

60

60.5

-

Gain Flatness

dB

-

-

±1.0

Duty Cycle

%

-

-

20

DC

Pulse Width

us

-

-

500

PW

Efficiency

%

30

35

-

Amplitude Pulse Droop

dB

-

0.5

1.0

Droop

Harmonics 1 to N

dBc

40

-

-

Spurious Level

dBc

60

-

-

Spur

Rise Time

ns

-

-

200

Fall Time

ns

-

-

200

Input VSWR

dB

-

-

1.5:1

VSWR

Output VSWR

dB

-

-

1.5:1

VSWR

Switching Time

us

-

0.5

1

Phase Deviation

˚

-20

-

20

∆φ

∗ Test Pulse conditions = 100us, 10%

∗ Above electrical specifications is measured by connecting electrolytic condenser 10,000uF to DC. Please make sure that electrolytic condenser is

connected properly while testing the module.

Absolute Maximum Ratings

PARAMETER

UNIT

RATING

SYMBOL

Operating Junction Temperature

°C

225

Operating Flange Temperature

°C

-30 ~ 75

Storage Temperature

°C

-30 ~ 125