Preliminary

GaN Hybrid Power Amplifier

RRC29050-10

Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com

All specifications may change without notice

US Facilities : 919-677-8780 / sales@rfhicusa.com

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Version 0.2

Mechanical Specifications

PARAMETER

UNIT

TYP

REMARK

Mass

g

2

-

Dimension

㎜

20.5 x 15 x 4.8

-

Absolute Maximum Ratings

PARAMETER

UNIT

RATING

SYMBOL

Gate-Source Voltage

V

-10 ~ 0

Vgs1

Vgs2

Drain-Source Voltage

V

100

Vds

Gate Current

mA

50

Ig

Operating Junction Temperature

°C

225

Operating Case Temperature

°C

-30 ~ 80

Storage Temperature

°C

-55 ~ 150

Operating Voltages

PARAMETER

UNIT

MIN

TYP

MAX

SYMBOL

Drain Voltage

V

47

48

49

Vds

Gate Voltage (on-stage)

V

-

Vgs1@Idq1

-2

Vgs 1

Gate Voltage (on-stage)

V

-

Vgs2@Idq2

-2

Vgs 2

Gate Voltage (off-stage)

V

-

-8

-

Vgs 1

Gate Voltage (off-stage)

V

-

-8

-

Vgs 2

Power Supply

PARAMETER

UNIT

MIN

TYP

MAX

SYMBOL

Drain-Source current

A

-

-

3

Ids

Gate-Source Current (on-stage)

mA

-

-

20

Igs

Gate-Source Current (off-stage)

mA

-

-

0.04

Igs

Block Diagram