PMDPB70XPE

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 1 — 20 June 2012

7 of 15

NXP Semiconductors

PMDPB70XPE

20 V dual P-channel Trench MOSFET

(1) minimum values

(2) typical values

(3) maximum values

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 7.

Sub-threshold drain current as a function of

gate-source voltage

Fig 8.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 9.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

0-4

-3

-1

-2

aaa-003872

-4

-8

-12

(A)

0

-3.0 V

-2.5 V

-2.2 V

-1.8 V

-8.0 V

-4.5 V

-3.5 V

017aaa129

0.0

− 1.5

−1.0

−0.5

(A)

(2)

(1)

(3)

0

-12

-8

-4

aaa-003873

100

200

300

(mΩ)

0

-1.8 V

-2.5 V

-3.0 V

-8.0 V

-4.5 V

-2.8 V

-3.5 V

0-6

-4

-2

aaa-003874

100

200

300

(mΩ)

0