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TPS92075 Datasheet(PDF) 3 Page - Texas Instruments |
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TPS92075 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 29 page TPS92075 www.ti.com SLUSB88B – DECEMBER 2012 – REVISED JANUARY 2014 ABSOLUTE MAXIMUM RATINGS (1) All voltages are with respect to GND, –40°C < TJ = TA < 125°C, all currents are positive into and negative out of the specified terminal (unless otherwise noted) VALUE UNIT MIN MAX Input voltage range VCC –0.3 22 V ASNS, COFF –0.3 6.0 Bias and ISNS IQ bias current (non-switching) 2.5 mA ISNS(2) to Ground –0.3 2.5 V Gate GATE - continuous –0.3 18 V GATE - 100 ns –2.5 20.5 V Continuous power dissipation Internally Limited Electrostatic discharge Human Body Model (HBM) 2 kV Field Induced Charged Device Model (FICDM) 750 V Operating junction temperature, TJ (3) 160 °C Storage temperature range, Tstg –65 150 °C Lead temperature, soldering, 10s 260 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) ISNS can sustain –2 V for 100 ns without damage. (3) Maximum junction temperature is internally limited. THERMAL INFORMATION TPS92075 SOIC TSOT THERMAL METRIC(1) UNITS (D) (DDC) 8 PINS 6 PINS θJA Junction-to-ambient thermal resistance(2) 112.3 165.5 θJCtop Junction-to-case (top) thermal resistance(3) 58.4 28.8 θJB Junction-to-board thermal resistance(4) 52.5 24.6 °C/W ψJT Junction-to-top characterization parameter(5) 12.5 0.3 ψJB Junction-to-board characterization parameter(6) 51.9 23.8 θJCbot Junction-to-case (bottom) thermal resistance(7) NA NA (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. (2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. (3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC- standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. (4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. (5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). (6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7). (7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Spacer Copyright © 2012–2014, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: TPS92075 |
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