PESDXL4UF_G_W_4

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 04 — 28 February 2008

3 of 17

NXP Semiconductors

PESDxL4UF/G/W

Low capacitance unidirectional quadruple ESD protection diode arrays

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 4.

Ordering information

Type number

Package

Name

Description

Version

PESD3V3L4UF

XSON6

plastic extremely thin small outline package;

no leads; 6 terminals; body 1

× 1.45 × 0.5 mm

SOT886

PESD5V0L4UF

PESD3V3L4UG

SC-88A

plastic surface-mounted package; 5 leads

SOT353

PESD5V0L4UG

PESD3V3L4UW

-

plastic surface-mounted package; 5 leads

SOT665

PESD5V0L4UW

Table 5.

Marking codes

Type number

Marking code[1]

PESD3V3L4UF

A5

PESD5V0L4UF

A6

PESD3V3L4UG

L1*

PESD5V0L4UG

L2*

PESD3V3L4UW

A2

PESD5V0L4UW

A1

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

peak pulse power

[1][2][3] -30

W

peak pulse current

[1][2][3]

PESD3V3L4UF

PESD3V3L4UG

PESD3V3L4UW

-

3.0

A

PESD5V0L4UF

PESD5V0L4UG

PESD5V0L4UW

-

2.5

A

non-repetitive peak forward

current

square wave;

-

3.5

A