PESD5V0L4UG datasheet(5/17 Pages) PHILIPS

Part #	PESD5V0L4UG

Description	Low capacitance unidirectional quadruple ESD protection diode arrays

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Manufacturer	PHILIPS [NXP Semiconductors]

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5 / 17 page

PESDXL4UF_G_W_4

Product data sheet

Rev. 04 — 28 February 2008

5 of 17

NXP Semiconductors

PESDxL4UF/G/W

Low capacitance unidirectional quadruple ESD protection diode arrays

6.

Characteristics

Fig 1.

8/20

µs pulse waveform according to

IEC 61000-4-5

Fig 2.

ESD pulse waveform according to

IEC 61000-4-2

t (

µs)

040

30

10

20

001aaa630

40

80

120

IPP

(%)

0

e−t

100 % IPP; 8 µs

50 % IPP; 20 µs

001aaa631

IPP

100 %

90 %

t

30 ns

60 ns

10 %

tr = 0.7 ns to 1 ns

Table 9.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VRWM

reverse standoff voltage

PESD3V3L4UF

PESD3V3L4UG

PESD3V3L4UW

-

3.3

V

PESD5V0L4UF

PESD5V0L4UG

PESD5V0L4UW

-

5.0

V

IRM

reverse leakage current

PESD3V3L4UF

PESD3V3L4UG

PESD3V3L4UW

VRWM = 3.3 V

-

75

300

nA

PESD5V0L4UF

PESD5V0L4UG

PESD5V0L4UW

VRWM = 5.0 V

-

5

25

nA

VBR

breakdown voltage

IR =1mA

PESD3V3L4UF

PESD3V3L4UG

PESD3V3L4UW

5.32

5.6

5.88

V

PESD5V0L4UF

PESD5V0L4UG

PESD5V0L4UW

6.46

6.8

7.14

V

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PESD5V0L4UG Datasheet(PDF) 5 Page - NXP Semiconductors

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