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BQ24158 Datasheet(PDF) 7 Page - Texas Instruments

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Part # BQ24158
Description  Fully Integrated Switch-Mode One-Cell Li-Ion Charger With Full USB Compliance and USB-OTG Support
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

BQ24158 Datasheet(HTML) 7 Page - Texas Instruments

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bq24153A, bq24156A
bq24158, bq24159
www.ti.com
SLUSAB0C – OCTOBER 2010 – REVISED JULY 2013
ELECTRICAL CHARACTERISTICS (continued)
Circuit of Figure 2, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), TJ = –40°C to 125°C, TJ = 25°C for typical values
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
PWM
Voltage from BOOT pin to SW pin
During charge or boost operation
6.5
V
Internal top reverse blocking MOSFET on-
IIN(LIMIT) = 500 mA, Measured from VBUS to PMID
180
250
resistance
Internal top N-channel Switching MOSFET on-
Measured from PMID to SW,
120
250
m
resistance
VBOOT – VSW= 4V
Internal bottom N-channel MOSFET on-
Measured from SW to PGND
110
210
resistance
f(OSC)
Oscillator frequency
3.0
MHz
Frequency accuracy
–10%
10%
D(MAX)
Maximum duty cycle
99.5%
D(MIN)
Minimum duty cycle
0
Synchronous mode to non-synchronous mode
Low-side MOSFET cycle-by-cycle current sensing
100
mA
transition current threshold(3)
CHARGE MODE PROTECTION
Input VBUS OVP threshold voltage
VBUS threshold to turn off converter during charge
6.3
6.5
6.7
V
(bq24153A/8)
VOVP_IN_USB
V(OVP_IN_USB) hysteresis (bq24153A/8)
VBUS falling from above V(OVP_IN_USB)
170
mV
Threshold over VBUS to turn off converter during
VOVP-IN_DYN
Input VBUS OVP threshold voltage (bq24156A)
9.57
9.8
10
charge
V(OVP_IN_DYN) hysteresis (bq24156A/9)
VBUS falling from above V(OVP_IN_DYN)
140
V(CSOUT) threshold over V(OREG) to turn off charger
Output OVP threshold voltage
110
117
121
during charge
VOVP
%VOREG
V(OVP) hysteresis
Lower limit for V(CSOUT) falling from above V(OVP)
11
ILIMIT
Cycle-by-cycle current limit for charge
Charge mode operation
1.8
2.4
3.0
A
Trickle to fast charge threshold
V(CSOUT) rising
2.0
2.1
2.2
V
VSHORT
VSHORT hysteresis
V(CSOUT) falling below VSHORT
100
mV
ISHORT
Trickle charge charging current
V(CSOUT) ≤ VSHORT)
20
30
40
mA
BOOST MODE OPERATION FOR VBUS (OPA_MODE = 1, HZ_MODE = 0, bq24153A/8 only)
VBUS_B
Boost output voltage (to VBUS pin)
2.5V < V(CSOUT) < 4.5 V
5.05
V
Boost output voltage accuracy
Including line and load regulation
–3%
3%
IBO
Maximum output current for boost
VBUS_B = 5.05 V, 2.5 V < V(CSOUT) < 4.5 V
200
mA
IBLIMIT
Cycle by cycle current limit for boost
VBUS_B = 5.05 V, 2.5 V < V(CSOUT) < 4.5 V
1.0
A
Overvoltage protection threshold for boost
Threshold over VBUS to turn off converter during
5.8
6.0
6.2
V
(VBUS pin)
boost
VBUSOVP
VBUSOVP hysteresis
VBUS falling from above VBUSOVP
162
mV
Maximum battery voltage for boost (CSOUT
V(CSOUT) rising edge during boost
4.75
4.9
5.05
V
pin)
VBATMAX
VBATMAX hysteresis
V(CSOUT) falling from above VBATMAX
200
mV
During boosting
2.5
V
VBATMIN
Minimum battery voltage for boost (CSOUT pin)
Before boost starts
2.9
3.05
V
Boost output resistance at high-impedance
CD = 1 or HZ_MODE = 1
217
k
mode (From VBUS to PGND)
PROTECTION
TSHTDWN)
Thermal trip
165
Thermal hysteresis
10
°C
TCF
Thermal regulation threshold
Charge current begins to reduce
120
t32S
32 second watchdog (WD) timer
32 Second or HOST mode
15
32
s
t15M
15 minute safety timer
15 Minute mode
12
15
m
(3)
Bottom N-channel FET always turns on for ~30 ns and then turns off if current is too low.
Copyright © 2010–2013, Texas Instruments Incorporated
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