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BQ24158 Datasheet(PDF) 7 Page - Texas Instruments |
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BQ24158 Datasheet(HTML) 7 Page - Texas Instruments |
7 / 46 page bq24153A, bq24156A bq24158, bq24159 www.ti.com SLUSAB0C – OCTOBER 2010 – REVISED JULY 2013 ELECTRICAL CHARACTERISTICS (continued) Circuit of Figure 2, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), TJ = –40°C to 125°C, TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT PWM Voltage from BOOT pin to SW pin During charge or boost operation 6.5 V Internal top reverse blocking MOSFET on- IIN(LIMIT) = 500 mA, Measured from VBUS to PMID 180 250 resistance Internal top N-channel Switching MOSFET on- Measured from PMID to SW, 120 250 m Ω resistance VBOOT – VSW= 4V Internal bottom N-channel MOSFET on- Measured from SW to PGND 110 210 resistance f(OSC) Oscillator frequency 3.0 MHz Frequency accuracy –10% 10% D(MAX) Maximum duty cycle 99.5% D(MIN) Minimum duty cycle 0 Synchronous mode to non-synchronous mode Low-side MOSFET cycle-by-cycle current sensing 100 mA transition current threshold(3) CHARGE MODE PROTECTION Input VBUS OVP threshold voltage VBUS threshold to turn off converter during charge 6.3 6.5 6.7 V (bq24153A/8) VOVP_IN_USB V(OVP_IN_USB) hysteresis (bq24153A/8) VBUS falling from above V(OVP_IN_USB) 170 mV Threshold over VBUS to turn off converter during VOVP-IN_DYN Input VBUS OVP threshold voltage (bq24156A) 9.57 9.8 10 charge V(OVP_IN_DYN) hysteresis (bq24156A/9) VBUS falling from above V(OVP_IN_DYN) 140 V(CSOUT) threshold over V(OREG) to turn off charger Output OVP threshold voltage 110 117 121 during charge VOVP %VOREG V(OVP) hysteresis Lower limit for V(CSOUT) falling from above V(OVP) 11 ILIMIT Cycle-by-cycle current limit for charge Charge mode operation 1.8 2.4 3.0 A Trickle to fast charge threshold V(CSOUT) rising 2.0 2.1 2.2 V VSHORT VSHORT hysteresis V(CSOUT) falling below VSHORT 100 mV ISHORT Trickle charge charging current V(CSOUT) ≤ VSHORT) 20 30 40 mA BOOST MODE OPERATION FOR VBUS (OPA_MODE = 1, HZ_MODE = 0, bq24153A/8 only) VBUS_B Boost output voltage (to VBUS pin) 2.5V < V(CSOUT) < 4.5 V 5.05 V Boost output voltage accuracy Including line and load regulation –3% 3% IBO Maximum output current for boost VBUS_B = 5.05 V, 2.5 V < V(CSOUT) < 4.5 V 200 mA IBLIMIT Cycle by cycle current limit for boost VBUS_B = 5.05 V, 2.5 V < V(CSOUT) < 4.5 V 1.0 A Overvoltage protection threshold for boost Threshold over VBUS to turn off converter during 5.8 6.0 6.2 V (VBUS pin) boost VBUSOVP VBUSOVP hysteresis VBUS falling from above VBUSOVP 162 mV Maximum battery voltage for boost (CSOUT V(CSOUT) rising edge during boost 4.75 4.9 5.05 V pin) VBATMAX VBATMAX hysteresis V(CSOUT) falling from above VBATMAX 200 mV During boosting 2.5 V VBATMIN Minimum battery voltage for boost (CSOUT pin) Before boost starts 2.9 3.05 V Boost output resistance at high-impedance CD = 1 or HZ_MODE = 1 217 k Ω mode (From VBUS to PGND) PROTECTION TSHTDWN) Thermal trip 165 Thermal hysteresis 10 °C TCF Thermal regulation threshold Charge current begins to reduce 120 t32S 32 second watchdog (WD) timer 32 Second or HOST mode 15 32 s t15M 15 minute safety timer 15 Minute mode 12 15 m (3) Bottom N-channel FET always turns on for ~30 ns and then turns off if current is too low. Copyright © 2010–2013, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: bq24153A bq24156A bq24158 bq24159 |
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