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TPS51315 Datasheet(PDF) 5 Page - Texas Instruments |
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TPS51315 Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 33 page  Not Recommended for New Designs TPS51315 www.ti.com SLUS881B – MAY 2009 – REVISED AUGUST 2012 ELECTRICAL CHARACTERISTICS (continued) over recommended free-air temperature range (unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX UNIT POWERGOOD COMPARATOR PG in from lower (PGOOD goes high), 92.5% 95% 97.5% TA = 25°C PG Low hysteresis (PGOOD goes low) –4.5% –5.5% –6.5% VTH(PG) Powergood threshold PG in from higher (PGOOD goes high), 102.5% 105% 107.5% TA = 25°C PG High hysteresis (PGOOD goes low) 4.5% 5.5% 6.5% IPG(max) Powergood sink current VPGOOD = 0.5 V 2.5 7.5 mA TPGDEL PGOOD delay Delay for PGOOD in 64 μs UVLO / LOGIC THRESHOLD Wake up (UVLO out) 3.4 3.7 3.9 V VUVLO V5FILT UVLO threshold Hysteresis 200 300 400 mV SKIP mode enabled 3.3V VEN_PSV EN_PSV connection PWM-Only mode enabled FLOAT EN_PSV low 0.7 1 1.3 V Hysteresis 130 160 220 mV VEN_PSV EN_PSV logic input voltage EN_PSV float 1.70 1.95 2.25 V EN_PSV high 2.2 2.5 2.9 V Hysteresis 100 170 250 mV PROTECTION: OVERVOLTAGE (OVP) AND UNDERVOLTAGE (UVP) OVP detect 110% 115% 120% VOVP VFB OVP trip threshold Hysteresis 5% UVP detect 65% 70% 75% VUVP VFB UVP trip threshold Hysteresis 10% TUVPDEL VFB UVP delay 32 μs TUVPEN Output UVP enable delay 2 ms THERMAL SHUTDOWN Shutdown temperature(3) 145 160 175 °C TSDN Thermal SDN threshold Hysteresis(3) 10 12 14 °C INTEGRATED MOSFET RDS(on)upper Upper MOSFET RDS(on) See (3) 19 m Ω RDS(on)lower Lower MOSFET RDS(on) See (3) 7 m Ω (3) Ensured by design. Not production tested. Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: TPS51315 |
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