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LM3263 Datasheet(PDF) 2 Page - Texas Instruments |
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LM3263 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 40 page 4 3 2 1 Top View 4 3 2 1 Bottom View A B C D A B C D ACB ACB FB PVIN PVIN SW SW PGND SGND BGND PACB VIO SDATA SCLK GPO1 SVDD PVIN PVIN VIO SCLK SW SW SDATA GPO1 FB PGND SGND BGND ACB ACB PACB SVDD 1.8V RFFE Master LM3263 VIO BGND PGND 1.5 µH 10 µF 4.7 µF 3 x 1.0 µF VBATT 2.7V to 5.5V 10 µF FB ACB SW PACB SVDD 3.3 nF PVIN 0.1 µF PA(s) PA 2G VCC_PA 3G/4G VCC_PA Output Voltage 0.4V to 3.6V SCLK SDATA GPO1 SGND LM3263 SNVS837 – JUNE 2013 www.ti.com TYPICAL APPLICATION CIRCUIT This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. CONNECTION DIAGRAMS 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: LM3263 |
Similar Part No. - LM3263_14 |
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Similar Description - LM3263_14 |
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