SI4825DDY datasheet(4/10 Pages) VISHAY

Part #	SI4825DDY

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 68926

S-82484-Rev. A, 13-Oct-08

Vishay Siliconix

Si4825DDY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

1

0.01

0.001

0.1

10

100

TJ = 150 °C

TJ = 25 °C

- 0.4

- 0.2

0.0

0.2

0.4

0.6

0.8

- 50

- 25

0

25

50

75

100

125

150

TJ - Temperature (°C)

ID =250 µA

ID =5 mA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.02

0.04

0.06

0.08

0.10

024

6

8

10

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =10 A

0

34

68

102

136

170

0

1

0

.

00.01

Time (s)

0.1

Safe Operating Area

0.01

100

1

100

0.01

0.1

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

0.1

1

10

TA = 25 °C

Single Pulse

BVDSS

Limited byRDS(on)*

DC

10 s

100 ms

10 ms

1ms

1 s

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