9

Address (SA).

Bus operations are defined in Table 2.

Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.

RA =Address of the memory location to be read.

PA =Address of the memory location to be programmed. Addresses are latched on the falling edge of

the write pulse.

uniquely select any sector.

RD =Data read from location RA during read operation.

PD =Data to be programmed at location PA.

SD =Sector protection verify data. Output 01H at protected sector addresses and output 00H at unprotected

sector addresses.

Note:This command is valid while Fast Mode.

Table 6 Flash Memory Command Definitions

Command

Sequence

Bus

Write

Cycles

Req’d

First Bus

Write Cycle

Second Bus

Write Cycle

Third Bus

Write Cycle

Fourth Bus

Read/Write

Cycle

Fifth Bus

Write Cycle

Sixth Bus

Write Cycle

Addr.

Data

Addr.

Data Addr. Data

Addr.

Data

Addr.

Data Addr. Data

Read/Reset

1

XXXH

F0H

—

———

—

—

—

———

Read/Reset

3

555H

AAH

2AAH

55H

555H

F0H

RA

RD

—

—

—

—

Autoselect

3

555H

AAH

2AAH

55H

555H

90H

—

—

—

—

—

—

Program

4

555H

AAH

2AAH

55H

555H

A0H

PA

PD

—

—

—

—

Chip Erase

6

555H

AAH

2AAH

55H

555H

80H

555H

AAH

2AAH

55H

555H

10H

Sector Erase

6

555H

AAH

2AAH

55H

555H

80H

555H

AAH

2AAH

55H

SA

30H

Sector Erase Suspend Erase can be suspended during sector erase with Addr (“H” or “L”). Data (B0H)

Sector Erase Resume Erase can be resumed after suspend with Addr (“H” or “L”). Data (30H)

Set to

Fast Mode

3

555H

AAH

2AAH

55H

555H

20H

—

—

—

—

—

—

Fast Program

(Note)

2

XXXH

A0H

PA

PD

—

—

—

—

—

—

—

—

Reset from

Fast Mode

(Note)

2

XXXH

90H

XXXH

F0H

—

—————

—

—

Extended

Sector

Protect

4

XXXH

60H

SPA

60H

SPA

40H

SPA

SD

—

—

—

—