3

s GENERAL DESCRIPTION

The MBM29F040C is a 4M-bit, 5.0 V-only Flash memory organized as 512K bytes of 8 bits each. The

MBM29F040C is offered in a 32-pin PLCC and 32-pin TSOP(I) package. This device is designed to be

operations. The device can also be reprogrammed in standard EPROM programmers.

The standard MBM29F040C offers access times 55 ns and 90 ns, allowing operation of high-speed

microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write

enable (WE), and output enable (OE) controls.

to the command register using standard microprocessor write timings. Register contents serve as input to an

internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the device is similar

to reading from 12.0 V Flash or EPROM devices.

The MBM29F040C is programmed by executing the program command sequence. This will invoke the Embedded

Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies

proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds. Erase is

accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which

is an internal algorithm that automatically preprograms the array if it is not already programmed before executing

the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell

margin.

Any individual sector is typically erased and verified in 1 second. (If already completely preprogrammed.)

The device also features a sector erase architecture. The sector mode allows for 64K byte sectors of memory

to be erased and reprogrammed without affecting other sectors. The MBM29F040C is erased when shipped

from the factory.

The device features single 5.0 V power supply operation for both read and write functions. Internally generated

internally resets to the read mode.

of quality, reliability and cost effectiveness. The MBM29F040C memory electrically erases the entire chip or all

bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a

time using the EPROM programming mechanism of hot electron injection.