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PMDT290UNE Datasheet(PDF) 4 Page - NXP Semiconductors

Part # PMDT290UNE
Description  20 V, 800 mA dual N-channel Trench MOSFET
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PMDT290UNE Datasheet(HTML) 4 Page - NXP Semiconductors

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PMDT290UNE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
4 of 16
NXP Semiconductors
PMDT290UNE
20 V, 800 mA dual N-channel Trench MOSFET
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
IDM = single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
017aaa361
VDS (V)
10–1
102
10
1
1
10–1
10
ID
(A)
10–2
Limit RDSon = VDS/ID
(1)
(2)
(3)
(4)
(5)
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
330
380
K/W
[2]
-
280
320
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
--115
K/W
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
-
250
K/W


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