Electronic Components Datasheet Search |
|
PMDT290UNE Datasheet(PDF) 3 Page - NXP Semiconductors |
|
PMDT290UNE Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 16 page PMDT290UNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 13 September 2011 3 of 16 NXP Semiconductors PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C - 370 mA ESD maximum rating VESD electrostatic discharge voltage HBM [3] - 2000 V Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Fig 1. Normalized total power dissipation as a function of junction temperature Fig 2. Normalized continuous drain current as a function of junction temperature Tj (°C) −75 175 125 25 75 −25 017aaa123 40 80 120 Pder (%) 0 Tj (°C) −75 175 125 25 75 −25 017aaa124 40 80 120 Ider (%) 0 |
Similar Part No. - PMDT290UNE |
|
Similar Description - PMDT290UNE |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |