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1N4151W Datasheet(PDF) 1 Page - General Semiconductor |
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1N4151W Datasheet(HTML) 1 Page - General Semiconductor |
1 / 4 page 1N4151W SMALL SIGNAL DIODES FEATURES ¨ Silicon Epitaxial Planar Diode ¨ Fast switching diode. ¨ This diode is also available in other case styles including the SOD-123 case with the type designation 1N4151W and the Mini-MELF case with the type designation LL4151. MECHANICAL DATA Case: SOD-123 Plastic Case Weight: approx. 0.01 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified. SYMBOL VALUE UNIT Reverse Voltage VR 50 V Peak Reverse Voltage VRM 75 V Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 ¡C and f ³ 50 Hz IO 150(1) mA Surge Forward Current at t < 1 s and Tj = 25 ¡C IFSM 500 mA Power Dissipation at Tamb = 25 ¡C Ptot 410(1) mW Junction Temperature Tj 150 ¡C Storage Temperature Range TS Ð 65 to +150 ¡C NOTES: (1) Valid provided that electrodes are kept at ambient temperature 1/4/99 Dimensions in inches and (millimeters) SOD-123 .022 (0.55) .067 (1.70) min. .010 (0.25) Cathode Mark Top View .055 (1.40) |
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