November 2013

FQD7N10L

100 V, 5.8 A, 350 mΩ

Description

©2000 Fairchild Semiconductor Corporation

FQD7N10L Rev. C1

www.fairchildsemi.com

1

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, audio amplifier, DC motor control, and

variable switching power applications.

Features

Thermal Characteristics

Symbol

Parameter

FQD7N10LTM

Unit

Thermal Resistance, Junction to Case, Max.

5.0

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

110

50

D-PAK

G

S

D

G

S

D

ID = 2.9 A

• Low Gate Charge (Typ. 4.6 nC)

• Low Crss (Typ. 12 pF)

• 100% Avalanche Tested

Symbol

Parameter

FQD7N10L

TM

Unit

Drain-Source Voltage

100

V

Drain Current

5.8

A

3.67

A

Drain Current

- Pulsed

(Note 1)

23.2

A

Gate-Source Voltage

 20

V

Single Pulsed Avalanche Energy

(Note 2)

50

mJ

Avalanche Current

(Note 1)

5.8

A

Repetitive Avalanche Energy

(Note 1)

2.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

6.0

V/ns

2.5

W

25

W

- Derate above 25°C

0.2

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C