MMBD7000 datasheet(2/2 Pages) GE

Part #	MMBD7000

Description	DUAL SMALL SIGNAL SWITCHING DIODE

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Manufacturer	GE [General Semiconductor]

Direct Link	http://www.vishay.com

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MMBD7000

ELECTRICAL CHARACTERISTICS

SYMBOL

MIN.

MAX.

UNIT

Reverse Breakdown Voltage at IR=100

mAVBR

100

-

Volts

Leakage Current

at VR = 50 V

IR

-

1.0

mA

at VR = 100 V

IR

-

3.0

mA

at VR = 50 V, Tj = 125¡C

IR

-

100

mA

Forward Voltage

at IF = 1mA

VF

0.55

0.70

Volts

at IF = 10mA

VF

0.67

0.82

Volts

at IF = 100mA

VF

0.75

1.10

Volts

Capacitance

Ctot

-

1.5

pF

at VR = 0; f = 1MHZ

Reverse Recovery Time

from IF = 10mA to IR = 10 mA

trr

-

4.0

ns

measured at Irr = 1mA, RL = 100

W

Ratings at 25¡C ambient temperature unless otherwise specified (per diode).

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MMBD7000 Datasheet(PDF) 2 Page - General Semiconductor

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