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UGB10GCT Datasheet(PDF) 1 Page - General Semiconductor |
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UGB10GCT Datasheet(HTML) 1 Page - General Semiconductor |
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1 / 3 page  4 4//9 98 8 U UG GB B1 10 0F FC CT T A AN ND D U UG GB B1 10 0G GC CT T U UL LT TR RA AF FA AS ST T S SO OF FT T R RE EC CO OV VE ER RY Y R RE EC CT TIIF FIIE ER R R Re ev ve errs se e V Vo olltta ag ge e - 300-400 Volts F Fo orrw wa arrd d C Cu urrrre en ntt - 10.0 Amperes F FE EA AT TU UR RE ES S ♦ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ♦ Ideally suited for free wheeling diode power factor correction applications ♦ Soft recovery characteristics ♦ Excellent high temperature switching ♦ Optimized to reduce switching losses ♦ High temperature soldering in accordance with CECC 802 / Reflow guaranteed ♦ Glass passivated chip junction M ME EC CH HA AN NIIC CA AL L D DA AT TA A C Ca as se e:: JEDEC TO-263AB molded plastic body T Te errm miin na alls s:: Plated leads, solderable per MIL-STD-750, Method 2026 P Po olla arriitty y:: As marked M Mo ou un nttiin ng g P Po os siittiio on n:: Any M Mo ou un nttiin ng g T To orrq qu ue e:: 5 in. - lbs. max. W We eiig gh htt:: 0.08 ounce, 2.24 grams M MA AX XIIM MU UM M R RA AT TIIN NG GS S A AN ND D E EL LE EC CT TR RIIC CA AL L C CH HA AR RA AC CT TE ER RIIS ST TIIC CS S Ratings at 25°C ambient temperature unless otherwise specified. S SY YM MB BO OL LS S U UG GB B1 10 0F FC CT T U UG GB B1 10 0G GC CT T U UN NIIT TS S Maximum repetitive peak reverse voltage VRRM 300 400 Volts Working peak reverse voltage VRWM 225 300 Volts Maximum RMS voltage VRMS 210 280 Volts Maximum DC blocking voltage VDC 300 400 Volts Maximum average forward rectified current at TC=100°C I(AV) 10 Amps Peak forward surge current 8.3ms single half sine-wave superimposed IFSM 60A Amps on rated load (JEDEC Method) per leg Maximum instantaneous forward voltage per leg TJ=25°C 1.30 Volts IF= 5A TJ=150°C VF 1.05 Maximum reverse leakage current TJ=25°C 10 at working peak reverse voltage TJ=100°C IR 200 µA Maximum Reverse recovery time per leg at IF=1.0A, di/dt=100A/ µs, VR=30V, Irr=0.1 IRM trr 50 ns Maximum reverse recovery time per leg at IF=0.5A, IR=1.0A, Irr=0.25A trr 35 ns Maximum reverse recovery current per leg at IF=5A, di/dt=50A/ µs,VR=30V TC=100°C IRM 3.0 Amps Maximum stored charge per leg IF=2A, di/dt=20A/ µs, VR=30V, Irr=0.1 IRM Qrr 50 nC Typical thermal resistance from junction to case per leg R ΘJC 4.5 °C/W Operating junction and storage temperature range TJ, TSTG -40 to +150 °C N NO OT TE E:: (1) Pulse test: 300 µs pulse width, 1% duty cycle N NO OT TIIC CE E:: Advanced product information is subject to change without notice Dimensions in inches and (millimeters) ADVANCED INFORMATION ADVANCED INFORMATION ADVANCED INFORMATION T TO O--2 26 63 3A AB B |
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Similar Description - UGB10GCT |
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