FQD5N20LTM datasheet(3/8 Pages) FAIRCHILD

Part #	FQD5N20LTM

Description	N-Channel QFET MOSFET 200 V, 3.8 A, 1.2

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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3 / 8 page

FQD5N20L Rev. C1

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3

Typical Characteristics

02

6

4

8

10

0

2

4

6

8

V

GS = 10V

V

GS = 5V

※ Note : T

J = 25

℃

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

10

-1

10

0

10

1

25℃

150℃

※ Notes :

1. V

GS = 0V

2. 250μs Pulse Test

V

SD , Source-Drain Voltage [V]

2

0

4

8

6

10

-1

10

0

10

1

※ Notes :

1. V

DS = 30V

2. 250μs Pulse Test

-55℃

150℃

25℃

V

GS

, Gate-Source Voltage [V]

10

-1

0

10

1

10

-1

10

0

10

1

V

GS

Top :

10 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V

Bottom :

3.0 V

※ Notes :

1. 250μs Pulse Test

2. T

C = 25

℃

10

V

DS, Drain-Source Voltage [V]

0

02

8

10

0

2

4

6

8

10

12

V

DS = 100V

V

DS = 40V

V

DS = 160V

※ Note : I

D = 4.5 A

Q

G, Total Gate Charge [nC]

10

-1

0

10

1

0

100

200

300

400

500

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

10

V

DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

4

6

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