QSC112 datasheet(2/4 Pages) FAIRCHILD

Part #	QSC112

Description	Plastic Silicon Infrared Phototransistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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QSC112, QSC113, QSC114 Rev. 1.0.2

2

Absolute Maximum Ratings (T

A = 25°C unless otherwise speciﬁed)

Notes:

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16" (1.6mm) minimum from housing.

Electrical/Optical Characteristics (T

A =25°C)

Note:

5.

λ = 880 nm, AlGaAs.

Symbol

Parameter

Rating

Units

TOPR

Operating Temperature

-40 to +100

°C

TSTG

Storage Temperature

-40 to +100

°C

TSOL-I

Soldering Temperature (Iron)(2,3,4)

240 for 5 sec

°C

TSOL-F

Soldering Temperature (Flow)(2,3)

260 for 10 sec

°C

VCE

Collector-Emitter Voltage

30

V

VEC

Emitter-Collector Voltage

5

V

PD

Power Dissipation(1)

100

mW

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

λPS

Peak Sensitivity Wavelength

880

nm

Θ

Reception Angle

±4

°

ICEO

Collector-Emitter Dark Current

VCE = 10 V, Ee = 0

100

nA

BVCEO

Collector-Emitter Breakdown

IC = 1 mA

30

V

BVECO

Emitter-Collector Breakdown

IE = 100 µA

5

V

IC(ON)

On-State Collector Current QSC112

Ee = 0.5 mW/cm2, VCE = 5 V

(5)

14

mA

On-State Collector Current QSC113

2.40

9.60

On-State Collector Current QSC114

4.00

VCE(sat)

Saturation Voltage

Ee = 0.5 mW/cm2, IC = 0.5 mA

(5)

0.4

V

tr

Rise Time

VCC = 5 V, RL = 100 Ω, IC = 2 mA

5.0

µs

tf

Fall Time

5.0

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