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P368 Datasheet(PDF) 1 Page - Hamamatsu Corporation |
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P368 Datasheet(HTML) 1 Page - Hamamatsu Corporation |
1 / 2 page CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their operating circuits simple and small. Features l Variety of package size l Highly resistant to moisture and dust Applications l Sensor for office machine l Safety device for heating system and boiler (flame monitor for oil burner) l Night/day check sensor and sunlight sensor for air conditioner l Alarm and safety sensor VISIBLE DETECTOR CdS photoconductive cell Hermetically sealed for high reliability Metal package type I Absolute maximum ratings / Characteristics (Typ. Ta=25 °C, unless otherwise noted) Absolute maximum ratings Characteristics * Resistance * Response time 10 lx *# Supply voltage Power dissipation P Ambient temperature Ta Peak sensitivity wavelength lp 10 lx, 2856 K 0 lx *! g * " Rise time tr Fall time tf Type No. Dimensional outline (Vdc) (mW) (°C) (nm) Min. (kW) Max. (kW) Min. (MW) 100 to 10 lx (ms) (ms) 5M type (TO-18) P1114-01 630 13 39 1 60 25 P1114-04 ➀ 100 30 -30 to +50 570 15 45 10 0.80 40 20 6M type (f5.5) P930 ➁ 150 50 -30 to +70 560 7 23 0.5 0.68 60 90 8M type (TO-5) P201B -30 to +50 560 21 63 200.8525 20 P201D 100 -30 to +60 520 20 60 100.9030 10 P368 14 43 P380 200 50 -30 to +50 620 4.4 13 20 0.85 35 20 P467 -30 to +60 520 8 24 5 0.90 50 20 P534 ➂ 100 100 -30 to +80 560 1.3 3.7 0.05 0.55 70 100 12M type (TO-8) P621 150 570 1.3 3.7 0.3 0.75 80 40 P3872 ➃ 400 300 -30 to +60 540 5 15 1.0 0.80 40 30 *1: All characteristics are measured after exposure to light (100 to 500 lx) for one to two hours. *2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K. *3: Measured 10 seconds after removal of light of 10lx. *4: Typical gamma characteristics (within±0.10 variations) between 100lx to 10lx E, E: illuminance 100lx, 10lx R, R: resistance at 100lx and 10lx respectively *5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (resistance when fully illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance level to 37 %. log (R100) - log (R10) log (E100) - log (E10) γ = 100 10 1 |
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