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1SS82 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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1SS82 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 1SS82 2 Absolute Maximum Ratings*2 (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage V RM* 1 250 V Reverse voltage V R 200 V Peak forward current I FM 625 mA Non-Repetitive peak forward surge current I FSM* 2 1A Average forward current I O 200 mA Power dissipation Pd 400 mW Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. Within 1s forward surge current. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage V F — — 1.0 V I F = 100mA Reverse current I R1 — — 0.2 µAV R = 200V I R2 — — 100 V R = 250V Capacitance C — 1.5 — pF V R = 0V, f = 1MHz Reverse recovery time t rr — — 100 ns I F = IR = 30mA, Irr = 3mA, R L = 100Ω |
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