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2SA1194 Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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2SA1194 Datasheet(HTML) 1 Page - Hitachi Semiconductor |
1 / 5 page 2SA1194(K) Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage V CBO –60 V Collector to emitter voltage V CEO –60 V Emitter to base voltage V EBO –7 V Collector current I C –1 A Collector peak current I C(peak) –2 A Collector power dissipation P C 1W P C* 1 8W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at T C = 25°C |
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