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SPD30N03S2L07 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPD30N03S2L07 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2005-02-14 Rev. 2.1 Page 1 OptiMOS® Power-Transistor Product Summary VDS 30 V RDS(on) 6.7 m Ω ID 30 A Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated PG-TO252-3-11 Marking 2N03L07 Type Package Ordering Code SPD30N03S2L-07 PG-TO252-3-11 Q67042-S4091 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current1) TC=25°C ID 30 30 A Pulsed drain current TC=25°C ID puls 120 Avalanche energy, single pulse ID=30 A , VDD=25V, RGS=25Ω EAS 250 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 13 Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 136 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 SPD30N03S2L-07 |
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