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2SC4308 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SC4308 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 6 page  2SC4308 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 30 V Collector to emitter voltage V CEO 20 V Emitter to base voltage V EBO 3V Collector current I C 300 mA Collector peak current i C (peak) 500 mA Collector power dissipation P C 600 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 30 ——V I C = 100 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 20 ——V I C = 1 mA, RBE = ∞ Collector cutoff current I CBO —— 1 µAV CB = 25 V, IE = 0 Emitter cutoff current I EBO —— 10 µAV EB = 3 V, IE = 0 DC current transfer ratio h FE 50 — 200 V CE = 5 V, IC = 50 mA Gain bandwidth product f T 1.5 2.5 — GHz V CE = 5 V, IC = 50 mA Collector output capacitance Cob — 4.0 — pF V CB = 10 V, IE = 0, f = 1 MHz |
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