Data Sheet DS00104 /June 2010

Process information and data (“Information”) in this document is an outline only , for general information purposes ; it does not constitute a representation or warranty

as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his requirements .

While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of

such Information.

All use of , and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request .

Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ

Tel: +44 1752 693000

Fax: +44 1752 693200

HGC

Bipolar Process

Data Sheet DS00104 / June 2010

Key parameters (minimum geometry device)

NPN

fT

22 GHz at IC=0.4 mA, Vce=3 V

CJC

3.3 fF

CJE

5.4fF

Bvceo

> 4.5V

Applications

•

LNAs

•

Synthesisers

•

Cellular radios

•

Wireless LANs

•

High speed logic

Key Process Feature

•

Integrated inductors (optional)

•

470 MHz lateral pnps

•

Varactor diodes - 0.5 fF/μm²

•

•

Polysilicon resistors - 110/155/1400 Ohms/sq

•

MIM capacitors - 0.65 fF/μm² (optional)

•

MIS capacitors - 2.75 fF/μm² (optional)

•

Two level or three level metal option

Npn cross section

oxide

epitaxy (n-)

Oxide

BN

Substrate (p-)

DC

Base

CS

CS

P+

Emitter

Collector

P+

base

fT vs IC min geometry HGC npn

0

5

10

15

20

25

1.00E-06

1.00E-05

1.00E-04

1.00E-03

1.00E-02

IC (A)

npn parameters (0.6 x 3.0um emitter)

parameter

Condition

Value

Units

fT

Ic=0.7mA Vce=2V

22

GHz

HFE

Ic=10

μA Vce=2V

140

VAF

63

V

BVCEO

Ic=1

μA

>4.5

V

BVCBO

Ic=1

μA

>8.0

V

CJE

Vbe=0

10

fF

CJC

Vbc=0

8

fF

CJS

Vcs=0

17

fF

Lateral pnp parameters (1.8 X 1.8

μm emitter)

parameter

Condition

Value

Units

fT

Ic=40

μA Vce=2V

470

MHz

HFE

Ic=10

μA Vce=2V

64

VAF

12

V

BVCEO

Ic=1

μA

>5.5

V

Polysilicon Resistor Values

parameter

Value

Units

LoP

155

± 20

Ω

LoN

110

± 20

Ω

HiP

1.4

± 0.2

k

Ω

Design Rules

Feature

Min

μm

Spacing

μm

Emitter

0.6 X 1.6

HiP resistor

1.0

0.8

LoP, LoN resistor

1.2

0.8

Contact

1.0 X 1.6

1.4

1st Layer metal

1.4

1.0

2

1.4

1.0

3

3.0

2.0

HGC is a double-polysilicon trench isolated bipolar process optimised

for RF applications in the range 900 MHz to 2.4 GHz.