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1 / 1 page Data Sheet DS00104 /June 2010 Process information and data (“Information”) in this document is an outline only , for general information purposes ; it does not constitute a representation or warranty as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his requirements . While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of such Information. All use of , and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request . Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ Tel: +44 1752 693000 Fax: +44 1752 693200 Web: www.plesseysemiconductors.com HGC Bipolar Process Data Sheet DS00104 / June 2010 Key parameters (minimum geometry device) NPN fT 22 GHz at IC=0.4 mA, Vce=3 V CJC 3.3 fF CJE 5.4fF Bvceo > 4.5V Applications • LNAs • Synthesisers • Cellular radios • Wireless LANs • High speed logic Key Process Feature • Integrated inductors (optional) • 470 MHz lateral pnps • Varactor diodes - 0.5 fF/μm² • Schottky Diodes - Vf=0.5 V • Polysilicon resistors - 110/155/1400 Ohms/sq • MIM capacitors - 0.65 fF/μm² (optional) • MIS capacitors - 2.75 fF/μm² (optional) • Two level or three level metal option Npn cross section oxide epitaxy (n-) Oxide BN Substrate (p-) DC Base CS CS P+ Emitter Collector P+ base fT vs IC min geometry HGC npn 0 5 10 15 20 25 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 IC (A) npn parameters (0.6 x 3.0um emitter) parameter Condition Value Units fT Ic=0.7mA Vce=2V 22 GHz HFE Ic=10 μA Vce=2V 140 VAF 63 V BVCEO Ic=1 μA >4.5 V BVCBO Ic=1 μA >8.0 V CJE Vbe=0 10 fF CJC Vbc=0 8 fF CJS Vcs=0 17 fF Lateral pnp parameters (1.8 X 1.8 μm emitter) parameter Condition Value Units fT Ic=40 μA Vce=2V 470 MHz HFE Ic=10 μA Vce=2V 64 VAF 12 V BVCEO Ic=1 μA >5.5 V Polysilicon Resistor Values parameter Value Units LoP 155 ± 20 Ω LoN 110 ± 20 Ω HiP 1.4 ± 0.2 k Ω Design Rules Feature Min μm Spacing μm Emitter 0.6 X 1.6 HiP resistor 1.0 0.8 LoP, LoN resistor 1.2 0.8 Contact 1.0 X 1.6 1.4 1st Layer metal 1.4 1.0 2 nd layer metal 1.4 1.0 3 rd layer metal 3.0 2.0 HGC is a double-polysilicon trench isolated bipolar process optimised for RF applications in the range 900 MHz to 2.4 GHz. |
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