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2SD2115 Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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2SD2115 Datasheet(HTML) 1 Page - Hitachi Semiconductor |
1 / 5 page 2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline 4 12 3 4 3 2 1 1. Base 2. Collector 3. Emitter 4. Collector DPAK S Type L Type Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage V CBO 150 V Collector to emitter voltage V CEO 60 V Emitter to base voltage V EBO 5V Collector current I C 2A Collector peak current I C(peak) 2.5 A Collector power dissipation P C* 1 18 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at T C = 25°C. |
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Similar Description - 2SD2115 |
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