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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed

for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

FEATURES 

DIRECT REPLACEMENT FOR INTERSIL 3N163 

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +200°C 

Operating Junction Temperature ‐55°C to +150°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

375mW 

MAXIMUM CURRENT

Drain Current 

50mA 

MAXIMUM VOLTAGES 

Drain to Gate ‐40V 

Drain to Source ‐40V 

Peak Gate to Source

2

±125V 

3N163 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Gate Forward Current  

‐10 

‐‐ 

‐‐ 

pA 

 

‐‐ 

‐‐ 

‐25 

Drain to Source Breakdown Voltage ‐40 

‐‐ 

‐‐ 

 

 

V 

Source‐Drain Breakdown Voltage ‐40 

‐‐ 

‐‐ 

Gate to Source Threshold Voltage ‐2.0 

‐‐ 

‐5.0 

‐2.0 

‐‐ 

‐5.0 

Gate Source Voltage ‐3.0 

‐‐ 

‐6.5 

Drain Leakage Current “Off” 

‐‐ 

‐‐ 

200 

pA 

Source Drain Current 

‐‐ 

‐‐ 

400 

Drain to Source “On” Resistance 

‐‐ 

‐‐ 

250 Ω 

Drain Current “On” ‐5.0 

‐‐ 

‐30 

mA 

Forward Transconductance 

2000 

‐‐ 

4000 

µS 

VDS = ‐15V,    ID = ‐10mA ,   f = 1kHz 

Output Admittance 

‐‐ 

‐‐ 

250 

‐‐ 

‐‐ 

2.5  

pF 

 

Reverse Transfer Capacitance 

‐‐ 

‐‐ 

0.7 

Output Capacitance Input Shorted 

‐‐ 

‐‐ 

3.0 

SYMBOL 

CHARACTERISTIC 

MAX 

UNITS 

CONDITIONS 

Turn On Delay Time 

12  

ns 

Turn On Rise Time 

24 

Turn Off Time 

50 

 

 

  

                                  SWITCHING TEST CIRCUIT 

The 3N163 is an enhancement mode P-Channel Mosfet

3N163

P-CHANNEL MOSFET

Note 1 ‐ Absolute maximum ratings are limiting values above which 3N163 serviceability may be impaired. 

Note 2 – Device must not be tested at ±125V more than once or longer than 300ms. 

Note 3 – For design reference only, not 100% tested

The 3N163 is an enhancement mode P-Channel Mosfet

designed for use as a General Purpose amplifier or

switch

The SOT-143 package provides ease of manufacturing,

and a lower cost assembly option.

(See Packaging Information).

Micross Components Europe

Tel: +44 1603 788967

Available Packages:

3N163 in SOT-143

3N163 in bare die.

Please contact Micross for full

package and die dimensions

3N163 Features:

Very high Input Impedance

Low Capacitance

High Gain

High Gate Breakdown Voltage

Low Threshold Voltage

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