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2SJ386 Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SJ386 Datasheet(HTML) 3 Page - Hitachi Semiconductor |
3 / 7 page 2SJ386 3 1.6 1.2 0.8 0.4 0 50 100 150 200 Ambient Temperature Ta (°C) Maximum Channel Dissipation Curve Drain to Source Voltage V (V) DS Maximum Safe Operation Area –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 100 µs Ta = 25 °C 1 shot pulse Operation in this area is limited by RDS(on) –2.0 –1.6 –1.2 –0.8 –0.4 0 –2 –4 –6 –8 –10 Drain to Source Voltage V (V) DS –3 V –2.5 V Typical Output Characteristics –5 V –4 V –3.5 V V = –2 V GS Ta = 25 °C Pulse Test –5 –4 –3 –2 –1 0 –1–2–3 –4 –5 Gate to Source Voltage V (V) GS Typical Transfer Characteristics 75 °C 25 °C V = –10 V Pulse Test DS Ta = –25 °C |
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