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2SJ484 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SJ484 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
4 / 9 page 2SJ484 4 Main Characteristics 2.0 1.5 1.0 0.5 0 50 100 150 200 –0.1 –0.3 –1 –3 –10 –30 –100 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –5 –4 –3 –2 –1 0 –2 –4 –6 –8 –10 –10 V –6 V –5 –4 –3 –2 –1 0 –1 –2 –3 –4 –5 1 ms Ta = 25 °C 100 µs PW = 10 ms (1 shot) V = –2.5 V GS –4 V –3 V –5 V –4.5 V –3.5 V Tc = 75 °C 25 °C –25 °C Ambient Temperature Ta ( °C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics Operation in this area is limited by R DS(on) Pulse Test V = –10 V Pulse Test DS Test Condition : When using the aliminium Ceramic board (12.5 x 20 x 70 mm) |
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