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2SJ484 Datasheet(PDF) 4 Page - Hitachi Semiconductor

Part # 2SJ484
Description  Silicon P-Channel MOS FET High Speed Power Switching
Download  9 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ484 Datasheet(HTML) 4 Page - Hitachi Semiconductor

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2SJ484
4
Main Characteristics
2.0
1.5
1.0
0.5
0
50
100
150
200
–0.1 –0.3
–1
–3
–10
–30
–100
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–5
–4
–3
–2
–1
0
–2
–4
–6
–8
–10
–10 V –6 V
–5
–4
–3
–2
–1
0
–1
–2
–3
–4
–5
1 ms
Ta = 25
°C
100
µs
PW
=
10
ms
(1
shot)
V
= –2.5 V
GS
–4 V
–3 V
–5 V
–4.5 V
–3.5 V
Tc = 75
°C
25
°C
–25
°C
Ambient Temperature
Ta (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Typical Transfer Characteristics
Operation in
this area is
limited by R DS(on)
Pulse Test
V
= –10 V
Pulse Test
DS
Test Condition :
When using the aliminium Ceramic
board (12.5 x 20 x 70 mm)


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