2SJ506 datasheet(1/10 Pages) HITACHI

Part #	2SJ506

Description	Silicon P Channel MOS FET High Speed Power Switching

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

Logo

1 / 10 page

2SJ506(L), 2SJ506(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-548

Target Specification 1st. Edition

Features

• Low on-resistance

R

DS(on) = 0.065 Ω typ. (at VGS = –10V, ID = –5A)

• Low drive current

• High speed switching

• 4V gate drive devices.

Outline

1 2

3

4

1 2

3

1. Gate

2. Drain

3. Source

4. Drain

DPAK–2

D

G

S

Similar Part No. - 2SJ506

Manufacturer	Part #	Datasheet	Description
Hitachi Semiconductor	2SJ484	43Kb / 9P	Silicon P-Channel MOS FET High Speed Power Switching
	2SJ517	43Kb / 8P	Silicon P Channel MOS FET High Speed Power Switching
	2SJ534	52Kb / 9P	Silicon P Channel MOS FET High Speed Power Switching
	2SJ544	54Kb / 9P	Silicon P Channel MOS FET High Speed Power Switching
	2SJ174	571Kb / 4P	SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
	2SJ177	268Kb / 2P	SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
	2SJ220L	171Kb / 1P	SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
	2SJ505	54Kb / 10P	Silicon P Channel MOS FET High Speed Power Switching
	2SJ526	51Kb / 9P	Silicon P Channel MOS FET High Speed Power Switching
	2SJ527	54Kb / 9P	Silicon P Channel MOS FET High Speed Power Switching