2SJ530 datasheet(3/9 Pages) HITACHI

Part #	2SJ530

Description	Silicon P Channel MOS FET High Speed Power Switching

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2SJ530(L),2SJ530(S)

3

Main Characteristics

40

30

20

10

0

50

100

150

200

–100

–30

–10

–3

–1

–0.3

–0.1

–0.1 –0.3

–1

–3

–10

–20

–16

–12

–8

–4

0

–2

–4

–6

–8

–10

0

–1–2–3

–4

–5

–30

–100

–1000

–300

–3.5 V

–3 V

–20

–16

–12

–8

–4

–25 °C

25 °C

Tc = 75 °C

–10 V

–6 V

–5 V

100

µs

1 ms

Ta = 25 °C

10 µs

DS

Pulse Test

V

= –10 V

–4 V

V

= –2.5 V

GS

Pulse Test

PW

=

10

ms

(1

shot)

DC

Operation

(Tc=25

℃)

Case Temperature

Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage

V

(V)

DS

Maximum Safe Operation Area

Drain to Source Voltage

V

(V)

DS

Typical Output Characteristics

Gate to Source Voltage

V

(V)

GS

Typical Transfer Characteristics

Operation in

this area is

limited by R DS(on)

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2SJ530 Datasheet(PDF) 3 Page - Hitachi Semiconductor

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