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2SJ539 Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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2SJ539 Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SJ539 5 500 200 100 20 50 10 5 –0.1 –0.3 –3 0 –10 –20 –30 –40 –50 5000 1000 300 100 0 –20 –40 –60 –80 0 0 –4 –8 –12 –16 –20 –100 816 24 32 40 1000 100 300 30 3 10 1 –0.1 –0.3 –1 –3 –10 –20 –1 –10 30 10 V = 0 f = 1 MHz GS Ciss Coss Crss DS V GS V D I = –10 A V = –10 V –25 V –50 V DD V = –10 V –25 V –50 V DD t f r t d(off) t d(on) t DD V = –10 V, V = –30 V Pw = 5 µs, duty < 1 % GS di / dt = 50 A / µs V = 0, Ta = 25 °C GS –20 Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics |
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